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2N2907A TIN/LEAD

型號描述:
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 400 mW Through Hole TO-18
60V 600MA 400MW TH TRANSISTOR-SM
型號:
2N2907A TIN/LEAD
品牌:
Central Semiconductor Corp
交期:
5-8工作天
原廠包裝量:
2000+NT$43.8735
起訂量:2000 倍增量:1
價格: NT$43.8735 數量:

合計: NT$87747

Packaging
Box
Package / Case
TO-206AA, TO-18-3 Metal Can
Mounting Type
Through Hole
Transistor Type
PNP
Operating Temperature
-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic
400mV @ 15mA, 150mA
Current - Collector Cutoff (Max)
50nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Frequency - Transition
200MHz
Supplier Device Package
TO-18
Grade
-
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
60 V
Power - Max
400 mW
Qualification
-
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